CGH35030F 30 w, 3300-3900 mhz, 28v, gan hemt for wimax crees CGH35030F is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3- 3.9ghz wimax and bwa amplifer applications. the transistor is supplied in a ceramic/metal fange package. package type: 440166 pn: CGH35030F preliminary r e v . 4 C m a y 2 0 0 7 features 3.3 - 3.9 ghz operation >11 db small signal gain 2.0 % evm at 4 w p out 23 % effciency at 4 w p out 3.7?c/w typical thermal resistance under 4.0 w p ave ofdm wimax fixed access 802.16-2004 ofdm ? ? ? ? ? ? typical performance over 3.3-3.7ghz (t c = 25?c) of demonstration amplifer parameter 3.3 ghz 3.4 ghz 3.5 ghz 3.6 ghz 3.7 ghz units small signal gain 10.9 11.1 10.9 10.7 10.8 db evm @ 36 dbm 1.9 1.9 1.9 2.0 2.0 % drain effciency @ 36 dbm 20.8 20.8 21.6 22.7 23.9 % input return loss 11.4 8.2 5.3 4.0 3.7 db note: measured in the CGH35030F-tb amplifer circuit, under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. subject to change without notice. www.cree.com/wireless
2 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units drain-source voltage v dss 84 volts gate-to-source voltage v gs -10, +2 volts storage temperature t stg -55, +150 ?c operating junction temperature t j 175 ?c soldering temperature t s 245 ?c thermal resistance, junction to case 1 r jc 3.7 ?c/w note: 1 measured for the CGH35030F at 14 w p diss electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 4 gate threshold voltage v gs(th) -3.6 -2.5 C vdc v ds = 10 v, i d = 7.2 ma gate quiescent voltage v gs(q) C -2.6 C vdc v ds = 28 v, i d = 120 ma saturated drain current i ds 4.8 5.4 - a v ds = 6.0 v, v gs = 2 v drain-source breakdown voltage v br 84 100 C vdc v gs = -8 v, i d = 7.2 ma forward transconductance g m 1200 1300 C ms v ds = 28 v, i d = 2 a case operating temperature t c -10 - +105 ?c screw torque t - - 60 in-oz reference 440166 package revision 3 rf characteristics 2,3 (t c = 25 ? c, f 0 = 3.6 ghz unless otherwise noted) small signal gain g ss 10.0 10.7 - db v dd = 28 v, i dq = 120 ma drain effciency 1 20.0 22.5 C % v dd = 28 v, i dq = 120 ma, p ave = 4 w back-off error vector magnitude evm 1 C 2.3 C % v dd = 28 v, i dq = 120 ma, p ave = 21 dbm error vector magnitude evm 2 C 2.0 C v dd = 28 v, i dq = 120 ma, p ave = 4 w output mismatch stress vswr - tbd - y no damage at all phase angles, v dd = 28 v, i dq = 120 ma dynamic characteristics input capacitance c gs C 9.3 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 2.0 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.9 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 drain effciency = p out / p dc 2 under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. 3 measured in the CGH35030F test fxture. 4 measured on wafer prior to packaging.
3 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical wimax performance typical evm and effciency at 21 dbm and 36 dbm vs frequency of CGH35030F in broadband amplifer circuit note: under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. gain and return loss vs frequency of CGH35030F in broadband amplifer circuit v dd = 28 v, i dq = 120 ma, ofdm bw = 3.5 mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 3.3 3.4 3.5 3.6 3.7 frequency (ghz) evm (%) 0 4 8 12 16 20 24 28 drain efficiency (%) evm @ 21dbm evm @ 36dbm efficiency -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 3.0 3.2 3.4 3.6 3.8 4.0 4.2 frequency (ghz) gain (db) -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 input return loss (db) s21 s11
4 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH35030F-tb demonstration amplifer circuit schematic CGH35030F-tb demonstration amplifer circuit outline cgh35030-tb 3-000538 rev1
5 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. CGH35030F-tb demonstration amplifer circuit bill of materials designator description qty r1 res,1/16w,0603,1%,100 ohms 1 r2 res,1/16w,0603,1%,47 ohms 1 c6 cap, 470pf, 10%,100v, 0603 1 c17 cap, 33 uf, 20%, g case 1 c16 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c8 cap 10uf 16v tantalum 1 c13 cap, 100.0pf, +/-5%, 0603 1 c1 cap, 0.8pf, +/-0.05pf, 0603 1 c2,c9,c10 cap, 0.7pf, +/-0.05pf, 0603 3 c4,c11 cap, 10.0pf,+/-5%, 0603 2 c5,c12 cap, 39pf, +/-5%, 0603 2 c7,c14 cap,33000pf, 0805,100v, x7r 2 j3,j4 conn sma str panel jack recp 1 j2 header rt>plz.1cen lk 2 pos 1 j1 header rt>plz .1cen lk 5pos 1 q1 CGH35030F 1 CGH35030F-tb demonstration amplifer circuit
6 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. source and load impedances frequency (mhz) z source z load 3300 5.3 - j8.9 13.3 - j10.0 3400 6.7 - j8.6 12.1 - j8.9 3500 7.7 - j9.3 11.0 - j7.8 3600 7.5 - j10.5 10.2 - j6.6 3700 6.3 - j11.0 9.5 - j5.5 note 1 : v dd = 28v, i dq = 120ma. in the 440166 package. note 2 : impedances are extracted from the cgh35030-tb demonstration circuit and are not source and load pull data off the transistors itself. product dimensions CGH35030F (package type 440166) d z source z load g s preliminary
7 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical package s-parameters (small signal, v ds = 28 v, i dq = 120 ma, magnitude / angle) frequency mag s ang s mag s2 ang s2 mag s2 ang s2 mag s22 ang s22 200 mhz 0.9207 -135.03 16.412 108.79 0.02981 20.50 0.6269 -156.01 300 mhz 0.9136 -150.21 11.402 100.13 0.03104 12.71 0.6531 -164.20 400 mhz 0.9108 -158.59 8.683 94.76 0.03149 8.20 0.6633 -168.67 500 mhz 0.9095 -164.02 6.998 90.82 0.03169 5.12 0.6685 -171.56 600 mhz 0.9087 -167.91 5.855 87.61 0.03177 2.77 0.6716 -173.62 700 mhz 0.9083 -170.90 5.032 84.84 0.03180 0.86 0.6737 -175.22 800 mhz 0.9080 -173.33 4.410 82.33 0.03180 -0.77 0.6754 -176.52 900 mhz 0.9079 -175.38 3.925 80.01 0.03177 -2.22 0.6769 -177.62 1.0 ghz 0.9078 -177.16 3.536 77.82 0.03172 -3.53 0.6782 -178.58 1.1 ghz 0.9077 -178.76 3.218 75.72 0.03167 -4.75 0.6794 -179.45 1.2 ghz 0.9077 179.80 2.952 73.69 0.03160 -5.88 0.6807 179.76 1.3 ghz 0.9077 178.46 2.727 71.72 0.03152 -6.96 0.6819 179.01 1.4 ghz 0.9077 177.20 2.533 69.80 0.03143 -7.98 0.6832 178.31 1.5 ghz 0.9078 176.01 2.366 67.91 0.03134 -8.96 0.6845 177.64 1.6 ghz 0.9078 174.88 2.220 66.05 0.03124 -9.90 0.6858 176.99 1.7 ghz 0.9079 173.79 2.091 64.22 0.03114 -10.80 0.6871 176.35 1.8 ghz 0.9079 172.73 1.976 62.41 0.03102 -11.68 0.6885 175.73 1.9 ghz 0.9080 171.70 1.874 60.62 0.03091 -12.52 0.6899 175.11 2.0 ghz 0.9080 170.70 1.781 58.84 0.03079 -13.34 0.6914 174.50 2.1 ghz 0.9081 169.71 1.698 57.09 0.03066 -14.14 0.6928 173.89 2.2 ghz 0.9082 168.74 1.623 55.34 0.03053 -14.91 0.6943 173.28 2.3 ghz 0.9082 167.78 1.554 53.60 0.03040 -15.65 0.6958 172.67 2.4 ghz 0.9083 166.83 1.491 51.88 0.03027 -16.38 0.6974 172.06 2.5 ghz 0.9083 165.89 1.433 50.17 0.03013 -17.07 0.6989 171.45 2.6 ghz 0.9084 164.95 1.380 48.46 0.02999 -17.75 0.7005 170.83 2.7 ghz 0.9084 164.01 1.330 46.76 0.02985 -18.40 0.7020 170.20 2.8 ghz 0.9084 163.08 1.285 45.07 0.02971 -19.03 0.7036 169.57 2.9 ghz 0.9084 162.14 1.243 43.39 0.02956 -19.64 0.7052 168.92 3.0 ghz 0.9085 161.21 1.203 41.72 0.02942 -20.22 0.7067 168.27 3.1 ghz 0.9085 160.27 1.167 40.04 0.02928 -20.78 0.7083 167.61 3.2 ghz 0.9085 159.33 1.133 38.38 0.02914 -21.32 0.7099 166.94 3.3 ghz 0.9084 158.38 1.101 36.72 0.02900 -21.83 0.7114 166.26 3.4 ghz 0.9084 157.43 1.071 35.63 0.02886 -22.31 0.7129 165.58 3.5 ghz 0.9084 156.48 1.043 33.41 0.02872 -22.77 0.7144 164.87 3.6 ghz 0.9083 155.51 1.016 31.76 0.02859 -23.21 0.7159 164.16 3.7 ghz 0.9082 154.54 0.991 30.12 0.02846 -23.62 0.7173 163.44 3.8 ghz 0.9082 153.56 0.968 28.47 0.02834 -24.01 0.7188 162.70 3.9 ghz 0.9081 152.58 0.946 26.83 0.02822 -24.37 0.7202 161.95 4.0 ghz 0.9079 151.58 0.926 25.19 0.02811 -24.70 0.7215 161.19
8 CGH35030F rev .4 preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless copyright ? 2005-2007 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, nc 27703 www.cree.com/wireles s ryan baker marketing cree, wireless devices 919.287.7816 tom dekker sales director cree, wireless devices 919.313.5639
|
